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FLI5928H 10524 AP2012EC BPC150 TSC426 BC847S ECH8301 71M35
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  2sc4774 / 2SC4713K transistors high frequency amplifier transistor, rf switching (60v, 50ma) 2sc4774 / 2SC4713K ! ! ! ! features 1) very low output-on resistance (ron). 2) low capacitance. ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 12 6 3 50 0.15 0.2 150 ? 55~ + 150 unit v v v ma w c c 2sc4774 2SC4713K collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ! ! ! ! packaging specifications and h fe type 2sc4774 umt3 s bm ? t106 3000 2SC4713K smt3 s bm ? t146 3000 ? denot es h fe package h fe marking code basic ordering unit (pieces) ! ! ! ! external dimensions (units : mm) 2sc4774 rohm : umt3 eiaj : sc-70 rohm : smt3 eiaj : sc-59 2SC4713K (1) emitter (2) base (3) collector each lead has same dimensions 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 (1) emitter (2) base (3) collector each lead has same dimensions 0.8 0.15 0~0.1 0.3min. 1.1 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob 12 6 3 ? ? ? 270 300 ? ? ? ? ? ? ? ? 800 1 ? ? ? 0.5 0.5 0.3 560 ? 1.7 v v v a a v ? mhz pf i c = 10 a i c = 1ma i e = 10 a v cb = 10v v eb = 2v i c /i b = 10ma/1ma v ce /i c = 10v/10ma v ce = 5v, i c = 10ma v cb = 10v, i e = 0a, f = 1mhz ron ? 2 ?? i b = 3ma, v i = 100mvrms, f = 500khz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance output-on resistance


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